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| MPS6543 Discrete POWER & Signal Technologies MPS6543 C EB TO-92 NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 100 A to 10 mA range. Sourced from Process 47. See MPSH11 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 25 35 3.0 50 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max MPS6543 350 2.8 125 357 Units mW mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation MPS6543 NPN RF Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = 1.0 mA, I B = 0 IC = 100 A, I E = 0 IE = 100 A, IC = 0 VCB = 25 V, IE = 0 VEB = 2.0 V, IC = 0 25 35 3.0 0.1 1.0 V V V A A ON CHARACTERISTICS* hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage VCE = 10 V, IC = 4.0 mA IC = 10 mA, IB = 1.0 mA IC = 10 mA, IB = 1.0 mA 25 0.35 0.95 V V SMALL SIGNAL CHARACTERISTICS fT Cob rb'CC Current Gain - Bandwidth Product Output Capacitance Collector- Base Time Constant IC = 4.0 mA, VCE = 10 V, f =100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz IE = 4.0 mA, VCE = 10 V, f = 31.8 MHz 750 1.0 9.5 MHz pF pS *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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